View MSAHX75L60C_48272.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714) 966-5256
MSAHX75L60C
600 Volts 75 Amps 1.8 Volts vce(sat)
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR
Features
* * * *
* * *
Rugged polysilicon gate cell structure high current handling capability, latch-proof Hermetically sealed, surface mount power package Low package inductance Very low thermal resistance Reverse polarity available upon request: MSAHX75L60D low VCE(sat) IGBT, low conduction losses
Maximum Ratings @ 25C (unless otherwise specified)
DESCRIPTION Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter)
@ TJ 25C
SYMBOL BVCES BVCGR VGES VGEM IC25 IC90 ICM Imax PD Tj Tstg JC
MAX. 600 600 +/-20 +/-30 75 60 200 100 300 -55 to +150 -55 to +150 0.25
UNIT Volts Volts Volts Volts Amps Amps Amps Watts C C C/W
Collector-to-Gate Breakdown Voltage @ TJ 25C, RGS= 1 M Continuous Gate-to-Emitter Voltage Transient Gate-to-Emitter Voltage Continuous Collector Current Tj= 25C
Tj= 90C
Peak Collector Current, pulse width limited by Tjmax, Safe Operating Area (RBSOA) @ VGE= 15V, L= 30H (clamped inductive
load), R G= 2.7, Tj= 125C, VCE= 0.8 x V CES
Power Dissipation Junction Temperature Range Storage Temperature Range Thermal Resistance, Junction to Case
Mechanical Outline
COLLECTOR
EMITTER
GATE
Datasheet# MSC0296A
MSAHX75L60C
Electrical Parameters @ 25C (unless otherwise specified)
DESCRIPTION
Collector-to-Emitter Breakdown Voltage (Gate Shorted to Emitter) Gate Threshold Voltage Gate-to-Emitter Leakage Current Collector-to-Emitter Leakage Current (Zero Gate Voltage Collector Current) Collector-to-Emitter Saturation Voltage (1) Forward Transconductance (1) Input Capacitance Output Capacitance Reverse Transfer Capacitance INDUCTIVE LOAD, Tj= 25C Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Off Energy INDUCTIVE LOAD, Tj= 125C Turn-on Delay Time Rise Time On Energy Turn-off Delay Time Fall Time Off Energy Total Gate Charge Gate-to-Emitter Charge Gate-to-Collector (Miller) Charge Antiparallel diode forward voltage
SYMBOL
BVCES VGE(th) IGES ICES VCE(sat) gfs Cies Coes Cres td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff Qg Qge Qgc VF
CONDITIONS
VGS = 0 V, I C = 250 A VCE = VGE, IC = 250 A VGE = 20V DC, VCE = 0 VCE =0.8*BVCES VGE = 0 V VGE= 15V, I C= 60A I C= 60A VCE 10 V; I C = 60 A
MIN
600 2.5
TYP.
MAX
5.0 100 200 200 1000 1.8
UNIT
V V nA A V S pF
T J = 25C T J = 125C TJ = 25C T J = 125C T J = 25C T J = 125C 30
1.8 40 4000 340 100 50 210 600 500 16 50 240 3 1000 1000 26 200 35 80 1.55 1.75 2 1.5 35 120 140 500 750 7 9
VGE = 0 V, V CE = 25 V, f = 1 MHz
VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 H note 2, 3
800 700
ns ns ns ns mJ ns ns mJ ns ns mJ nC
VGE = 15 V, V CE = 480 V, IC = 60 A, R G = 2.7 , L= 100 H note 2, 3
VGE = 15 V, V CE = 300V, I C = 50A IE= 30 A T J = 25 C IE= 60 A T J = 25 C IE= 100 A T J = 25 C IE= 60 A T J = 150 C IE= 1 A, dIE/dt= 100 A/us, T J= 25C IE= 10 A, dIE/dt= 200 A/us, T J= 100C IE= 40 A, dIE/dt= 200 A/us, T J= 100C IE= 10 A, dIE/dt= 200 A/us, T J= 100C IE= 40 A, dIE/dt= 100 A/us, T J= 100C IE= 10 A, dIE/dt= 200 A/us, T J= 100C IE= 40 A, dIE/dt= 200 A/us, T J= 100C
250 50 100
Antiparallel diode reverse recovery time
trr
150
Antiparallel diode reverse recovery charge Antiparallel diode peak recovery current
Qrr IRM
V V V V ns ns ns nC nC A A
Notes
(1) (2) (3) (4) Pulse test, t 300 s, duty cycle 2% switching times and losses may increase for larger V CE and/or R G values or higher junction temperatures. switching losses include "tail" losses Microsemi Corp. does not manufacture the igbt die; contact company for details.

▲Up To Search▲

Price & Availability of MSAHX75L60C

	To Download MSAHX75L60C Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .